STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF22NM60N STF22NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 083765-STF22NM60N Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF22NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V Alternative Parts (Cross-Reference): TK17A65U; TK17A65U(STA4,Q); ZDX100N60; TK290A65Y,S4X; Introduction Date: July 02, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Quantity per package: 50
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF22NM60N - 083765-STF22NM60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STF22NM60N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-10301-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF22NM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 38972970 - Radwell International
    Radwell International
  • Mosfet, N Channel, 600V, 16A, To-220Fp; Channel Type Stmicroelectronics - 55R6921 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 083765-STF22NM60N Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF22NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V Alternative Parts (Cross-Reference): TK17A65U; TK17A65U(STA4,Q); ZDX100N60; TK290A65Y,S4X; Introduction Date: July 02, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF22NM60N - 083765-STF22NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF22NM60N
083765-STF22NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF22NM60N 083765-STF22NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 083765-STF22NM60N Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF22NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 1800pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V Alternative Parts (Cross-Reference): TK17A65U; TK17A65U(STA4,Q); ZDX100N60; TK290A65Y,S4X; Introduction Date: July 02, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 083765-STF22NM60N
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: STF22NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1800pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 220 mOhm @ 8.5A, 10V
Alternative Parts (Cross-Reference): TK17A65U; TK17A65U(STA4,Q); ZDX100N60; TK290A65Y,S4X;
Introduction Date: July 02, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - STF22NM60N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF22NM60N
Single FETs, MOSFETs STF22NM60N
MOSFET N-CH 600V 16A TO220FP

MOSFET N-CH 600V 16A TO220FP

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600 V 0.2 Ohm 16 A MOSFET Transistor
278-STF22NM60N
N-Channel 600 V 0.2 Ohm 16 A MOSFET Transistor 278-STF22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FP Product overview: STF22NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.2 Ohm, 16 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.2 Ohm, 16 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF22NM60N can be used for catalog matching and distributor lookup.

N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FP Product overview: STF22NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.2 Ohm, 16 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.2 Ohm, 16 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF22NM60N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10301-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10301-5-ND
Single FETs, MOSFETs 497-10301-5-ND
N-Channel 600V 16A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 600V 16A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF22NM60N
MOSFET STF22NM60N
MOSFET N-channel 600 V 0.190 16A MDmesh

MOSFET N-channel 600 V 0.190 16A MDmesh

Buy Now Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
STF22NM60N
Triode/MOS Tube/Transistor >> MOSFETs STF22NM60N
600V 16A 30W 220mΩ@10V,8A 4V@100uA N Channel TO-220F-3 MOSFETs ROHS

600V 16A 30W 220mΩ@10V,8A 4V@100uA N Channel TO-220F-3 MOSFETs ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF22NM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF22NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF22NM60N
N-channel 600 V, 0.2 Ohm, 16 A M

N-channel 600 V, 0.2 Ohm, 16 A M

Supplier's Site
Transistor - 38972970 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38972970
Transistor 38972970
POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 600V, 0.22OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 16A I(D), 600V, 0.22OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Mosfet, N Channel, 600V, 16A, To-220Fp; Channel Type Stmicroelectronics - 55R6921 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 16A, To-220Fp; Channel Type Stmicroelectronics
55R6921
Mosfet, N Channel, 600V, 16A, To-220Fp; Channel Type Stmicroelectronics 55R6921
MOSFET, N CHANNEL, 600V, 16A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 16A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited Radwell International Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 083765-STF22NM60N STF22NM60N 278-STF22NM60N 497-10301-5-ND STF22NM60N STF22NM60N STF22NM60N 38972970 55R6921
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF22NM60N Single FETs, MOSFETs N-Channel 600 V 0.2 Ohm 16 A MOSFET Transistor Single FETs, MOSFETs MOSFET Triode/MOS Tube/Transistor >> MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Mosfet, N Channel, 600V, 16A, To-220Fp; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 600 volts 600 volts 600 volts
PD 30000 milliwatts 30000 milliwatts 30000 milliwatts 30000 milliwatts
TJ 150 C (302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220 Through Hole TO-3; TO-220
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