STMicroelectronics, Inc. Single FETs, MOSFETs STF21NM50N

Description
N-Channel 500V 18A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 500V 18A (Tc) 30W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-4803-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-4803-5-ND
Single FETs, MOSFETs 497-4803-5-ND
N-Channel 500V 18A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 500V 18A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF21NM50N - 066349-STF21NM50N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF21NM50N
066349-STF21NM50N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF21NM50N 066349-STF21NM50N
Manufacturer: STMicroelectronics Win Source Part Number: 066349-STF21NM50N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 65nC @ 10V Max Input Capacitance: 1950pF @ 25V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066349-STF21NM50N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 1950pF @ 25V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF21NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF21NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF21NM50N
MOSFET N-CH 500V 18A TO220FP

MOSFET N-CH 500V 18A TO220FP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-4803-5-ND 066349-STF21NM50N STF21NM50N
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF21NM50N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
V(BR)DSS 500 volts
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