Manufacturer: STMicroelectronics
Win Source Part Number: 212270-STF20N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 1345pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 190 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 18A TO220FP
N-Channel 650V 18A (Tc) 30W (Tc) Through Hole TO-220FP
650V 18A N-CH MOSFET TO-220FP 190mR Rds(on) Product overview: STF20N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF20N65M5 can be used for catalog matching and distributor lookup.
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh M5
MOSFET, N-CH, 650V, 18A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:18A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-CH 650V 18A TO220FP
650V 18A 190mΩ@9A,10V 30W 5V@250uA null TO-220-3 MOSFETs ROHS
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 212270-STF20N65M5 | STF20N65M5 | 497-13532-ND | 278-STF20N65M5 | STF20N65M5 | 45AC7564 | STF20N65M5 | STF20N65M5 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF20N65M5 | Single FETs, MOSFETs | Single FETs, MOSFETs | 650V 18A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 650V, 18A, To-220Fp; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 650 volts | 650 volts | 650 volts | |||||
| PD | 30000 milliwatts | 30000 milliwatts | 30000 milliwatts | 30000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | -55 C (-67 F) | |||||
| Package Type | TO-220; SOT3; TO-220FP | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | TO-220 |
