STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF18NM60N STF18NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031175-STF18NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF18NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1000pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): SPA11N65C3XKSA1; SPA16N50C3XK; SPA16N50C3; IPAW60R280CEXKSA1; Introduction Date: June 15, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF18NM60N - 031175-STF18NM60N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-10300-5-ND - DigiKey
    DigiKey
  • Mosfet, N Ch, 600V, 13A, To-220Fp; Channel Type Stmicroelectronics - 55R6918 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF18NM60N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031175-STF18NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF18NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1000pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): SPA11N65C3XKSA1; SPA16N50C3XK; SPA16N50C3; IPAW60R280CEXKSA1; Introduction Date: June 15, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF18NM60N - 031175-STF18NM60N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF18NM60N
031175-STF18NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF18NM60N 031175-STF18NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031175-STF18NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF18NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 1000pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V Alternative Parts (Cross-Reference): SPA11N65C3XKSA1; SPA16N50C3XK; SPA16N50C3; IPAW60R280CEXKSA1; Introduction Date: June 15, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 031175-STF18NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: STF18NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1000pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 285 mOhm @ 6.5A, 10V
Alternative Parts (Cross-Reference): SPA11N65C3XKSA1; SPA16N50C3XK; SPA16N50C3; IPAW60R280CEXKSA1;
Introduction Date: June 15, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-10300-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10300-5-ND
Single FETs, MOSFETs 497-10300-5-ND
N-Channel 600V 13A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 600V 13A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Mosfet, N Ch, 600V, 13A, To-220Fp; Channel Type Stmicroelectronics - 55R6918 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 600V, 13A, To-220Fp; Channel Type Stmicroelectronics
55R6918
Mosfet, N Ch, 600V, 13A, To-220Fp; Channel Type Stmicroelectronics 55R6918
MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

MOSFET, N CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF18NM60N
MOSFET STF18NM60N
MOSFET N-channel 600 V 0.27ohm 13A MDmesh

MOSFET N-channel 600 V 0.27ohm 13A MDmesh

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF18NM60N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF18NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF18NM60N
MOSFET N-CH 600V 13A TO220FP

MOSFET N-CH 600V 13A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 031175-STF18NM60N 497-10300-5-ND 55R6918 STF18NM60N STF18NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF18NM60N Single FETs, MOSFETs Mosfet, N Ch, 600V, 13A, To-220Fp; Channel Type Stmicroelectronics MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 30000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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