MOSFET N-CH 650V 12A TO220FP
Manufacturer: STMicroelectronics
Win Source Part Number: 1260940-STF18N65M2
Series: MDmesh M2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: STF18N65M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220FP
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 770pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 330 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): IPA60R450E6; IPP65R380E6; IPA65R380C6XK;
Introduction Date: December 15, 2014
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
N-Channel 650V 12A (Tc) 25W (Tc) Through Hole TO-220FP
MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package
MOSFET N-CH 650V 12A TO220FP
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STF18N65M2 | 1260940-STF18N65M2 | 497-STF18N65M2-ND | STF18N65M2 | STF18N65M2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF18N65M2 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 650 volts | ||||
| IDSS | 12000 milliamps |
