STMicroelectronics, Inc. Single FETs, MOSFETs STF18N60DM2

Description
MOSFET N-CH 600V 13A TO220FP
Request a Quote Datasheet
Description
MOSFET N-CH 600V 13A TO220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STF18N60DM2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF18N60DM2
Single FETs, MOSFETs STF18N60DM2
MOSFET N-CH 600V 13A TO220FP

MOSFET N-CH 600V 13A TO220FP

Supplier's Site Datasheet
FETs - Single - STF18N60DM2 - 716430-STF18N60DM2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STF18N60DM2
716430-STF18N60DM2
FETs - Single - STF18N60DM2 716430-STF18N60DM2
Manufacturer: STMicroelectronics Win Source Part Number: 716430-STF18N60DM2 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-220-3 Full Pack Power Dissipation (Maximum): 25W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 13A Rds On (Maximum) at Id, Vgs: 295mOhm at 6A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 20nC at 10V Gate Source Voltage (Maximum): ±25V Input Capacitance (Ciss) (Maximum) at Vds: 800pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 716430-STF18N60DM2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 25W
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 13A
Rds On (Maximum) at Id, Vgs: 295mOhm at 6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 20nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 800pF at 100V

Buy Now
Single FETs, MOSFETs - STF18N60DM2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STF18N60DM2-ND
Single FETs, MOSFETs STF18N60DM2-ND
N-Channel 600V 13A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 600V 13A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF18N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF18N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF18N60DM2
MOSFET N-CH 600V 13A TO220FP

MOSFET N-CH 600V 13A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.260 Ohm typ., 13 A MDmesh DM2 Power MOSFET in a TO-220FP package

MOSFET N-channel 600 V, 0.260 Ohm typ., 13 A MDmesh DM2 Power MOSFET in a TO-220FP package

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STF18N60DM2 716430-STF18N60DM2 STF18N60DM2-ND STF18N60DM2 STF18N60DM2
Product Name Single FETs, MOSFETs FETs - Single - STF18N60DM2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 13000 milliamps
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