STMicroelectronics, Inc. N-Channel 650 V 0.32 Ohm 11 A MOSFET Transistor STF16N65M2

N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package Product overview: STF16N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.32 Ohm, 11 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.32 Ohm, 11 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF16N65M2 can be used for catalog matching and distributor lookup.

N-Channel 650V 11A (Tc) 25W (Tc) Through Hole TO-220FP

MOSFET N-CH 650V 11A TO220FP

Manufacturer: STMicroelectronics
Win Source Part Number: 1260939-STF16N65M2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 25W
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 11A
Rds On (Maximum) at Id, Vgs: 360mOhm at 5.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 19.5nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 718pF at 100V