STMicroelectronics, Inc. Single FETs, MOSFETs STF13NM60ND

Description
N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13865-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13865-5-ND
Single FETs, MOSFETs 497-13865-5-ND
N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF13NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF13NM60ND
Single FETs, MOSFETs STF13NM60ND
MOSFET N-CH 600V 11A TO220FP

MOSFET N-CH 600V 11A TO220FP

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60ND - 1102947-STF13NM60ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60ND
1102947-STF13NM60ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60ND 1102947-STF13NM60ND
Manufacturer: STMicroelectronics Win Source Part Number: 1102947-STF13NM60ND Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Family Name: STF13NM60ND Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 24.5nC @ 10V Max Input Capacitance: 845pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): ZDX100N60; SPA16N50C3XK; SPA16N50C3X; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Quantity per package: 50

Manufacturer: STMicroelectronics
Win Source Part Number: 1102947-STF13NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Family Name: STF13NM60ND
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 24.5nC @ 10V
Max Input Capacitance: 845pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 380 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): ZDX100N60; SPA16N50C3XK; SPA16N50C3X;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF13NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF13NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF13NM60ND
MOSFET N-CH 600V 11A TO220FP

MOSFET N-CH 600V 11A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II

MOSFET N-CH 600V 0.32Ohm 11A FDMesh II

Buy Now Datasheet
Mosfet, N-Ch, 600V, 11A, 150Deg C, 25W; Transistor Polarity Stmicroelectronics - 26AH0163 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 11A, 150Deg C, 25W; Transistor Polarity Stmicroelectronics
26AH0163
Mosfet, N-Ch, 600V, 11A, 150Deg C, 25W; Transistor Polarity Stmicroelectronics 26AH0163
MOSFET, N-CH, 600V, 11A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 11A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13865-5-ND STF13NM60ND 1102947-STF13NM60ND STF13NM60ND STF13NM60ND 26AH0163
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60ND Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 11A, 150Deg C, 25W; Transistor Polarity Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 11000 milliamps 11000 milliamps
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