STMicroelectronics, Inc. Single FETs, MOSFETs STF13NM60N

Description
MOSFET N-CH 600V 11A TO220FP
Request a Quote Datasheet
Description
MOSFET N-CH 600V 11A TO220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STF13NM60N - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF13NM60N
Single FETs, MOSFETs STF13NM60N
MOSFET N-CH 600V 11A TO220FP

MOSFET N-CH 600V 11A TO220FP

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-8892-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8892-5-ND
Single FETs, MOSFETs 497-8892-5-ND
N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60N - 031174-STF13NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60N
031174-STF13NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60N 031174-STF13NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 031174-STF13NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Family Name: STF13NM60N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 11A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 790pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V Alternative Parts (Cross-Reference): ZDX100N60; SPA16N50C3XK; SPA16N50C3X; Introduction Date: February 23, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 031174-STF13NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Family Name: STF13NM60N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 790pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 360 mOhm @ 5.5A, 10V
Alternative Parts (Cross-Reference): ZDX100N60; SPA16N50C3XK; SPA16N50C3X;
Introduction Date: February 23, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF13NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF13NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF13NM60N
MOSFET N-CH 600V 11A TO220FP

MOSFET N-CH 600V 11A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 11A MDMESH Power MDmesh

MOSFET N-CH 600V 11A MDMESH Power MDmesh

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STF13NM60N 497-8892-5-ND 031174-STF13NM60N STF13NM60N STF13NM60N
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13NM60N Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 11000 milliamps
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