STMicroelectronics, Inc. Single FETs, MOSFETs STF13N95K3

Description
N-Channel 950V 10A (Tc) 40W (Tc) Through Hole TO-220FP
Request a Quote Datasheet
Description
N-Channel 950V 10A (Tc) 40W (Tc) Through Hole TO-220FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12568-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12568-5-ND
Single FETs, MOSFETs 497-12568-5-ND
N-Channel 950V 10A (Tc) 40W (Tc) Through Hole TO-220FP

N-Channel 950V 10A (Tc) 40W (Tc) Through Hole TO-220FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13N95K3 - 1102946-STF13N95K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13N95K3
1102946-STF13N95K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13N95K3 1102946-STF13N95K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102946-STF13N95K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 950V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 51nC @ 10V Max Input Capacitance: 1620pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 850 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102946-STF13N95K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 950V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1620pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 850 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF13N95K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF13N95K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF13N95K3
MOSFET N-CH 950V 10A TO220FP

MOSFET N-CH 950V 10A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 950V 0.68 Ohm 10A SuperMESH3

MOSFET N-Ch 950V 0.68 Ohm 10A SuperMESH3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-12568-5-ND 1102946-STF13N95K3 STF13N95K3 STF13N95K3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13N95K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220FP TO-220; TO-220-3 Full Pack
V(BR)DSS 950 volts
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