N-Channel 650V 10A (Tc) 25W (Tc) Through Hole TO-220FP
N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP package Product overview: STF13N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.37 Ohm, 10 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.37 Ohm, 10 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF13N65M2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 897948-STF13N65M2
Series: MDmesh™ M2
Operating Temperature Range: 150°C (TJ)
Features: N-Channel 650 V 10A (Tc) 25W (Tc) Through Hole TO-220FP
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: STF13
Categories: Discrete Semiconductor Products
Case / Package: TO-220FP
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-15532-5, -497-15532-5
N-channel 650 V, 0.37 Ohm typ.
MOSFET, N-CH, 650V, 10A, 150DEG C, 25W; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 10A TO220FP
MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220FP package
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-15532-5-ND | 278-STF13N65M2 | 897948-STF13N65M2 | STF13N65M2 | 26AH0164 | STF13N65M2 | STF13N65M2 |
| Product Name | Single FETs, MOSFETs | N-Channel 650 V 0.37 Ohm 10 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF13N65M2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 10A, 150Deg C, 25W; Transistor Polarity Stmicroelectronics | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3; TO-220FP | TO-220; TO-220FP | TO-3 | TO-220; TO-220-3 Full Pack | ||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Packing Method | 1 | ||||||
| IDSS | 10000 milliamps | 10000 milliamps |
