MOSFET N-CH 650V 7A TO220FP
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-220FP
N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package Product overview: STF11N65M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.60 Ohm, 7 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.60 Ohm, 7 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF11N65M2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1260930-STF11N65M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: STF11N65M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220FP
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 410pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 670 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): AP09N70P-A-HF; IPP65R660CFDXK; IPP65R660CFDAXK;
Introduction Date: May 09, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 7A TO220FP
MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STF11N65M2 | 497-15034-5-ND | 278-STF11N65M2 | 1260930-STF11N65M2 | STF11N65M2 | STF11N65M2 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 650 V 0.60 Ohm 7 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 7000 milliamps |
