STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2 STF11N65M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260930-STF11N65M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: STF11N65M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220FP Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 410pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 670 mOhm @ 3.5A, 10V Alternative Parts (Cross-Reference): AP09N70P-A-HF; IPP65R660CFDXK; IPP65R660CFDAXK; Introduction Date: May 09, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2 - 1260930-STF11N65M2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-15034-5-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STF11N65M2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF11N65M2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260930-STF11N65M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: STF11N65M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220FP Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 410pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 670 mOhm @ 3.5A, 10V Alternative Parts (Cross-Reference): AP09N70P-A-HF; IPP65R660CFDXK; IPP65R660CFDAXK; Introduction Date: May 09, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2 - 1260930-STF11N65M2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2
1260930-STF11N65M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2 1260930-STF11N65M2
Manufacturer: STMicroelectronics Win Source Part Number: 1260930-STF11N65M2 Series: MDmesh II Plus Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Full Pack Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Family Name: STF11N65M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-220FP Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 410pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 670 mOhm @ 3.5A, 10V Alternative Parts (Cross-Reference): AP09N70P-A-HF; IPP65R660CFDXK; IPP65R660CFDAXK; Introduction Date: May 09, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2032 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1260930-STF11N65M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: STF11N65M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-220FP
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 12.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 410pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 670 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): AP09N70P-A-HF; IPP65R660CFDXK; IPP65R660CFDAXK;
Introduction Date: May 09, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2032
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-15034-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15034-5-ND
Single FETs, MOSFETs 497-15034-5-ND
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF11N65M2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF11N65M2
Single FETs, MOSFETs STF11N65M2
MOSFET N-CH 650V 7A TO220FP

MOSFET N-CH 650V 7A TO220FP

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF11N65M2
MOSFET STF11N65M2
MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package

MOSFET N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF11N65M2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF11N65M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF11N65M2
MOSFET N-CH 650V 7A TO220FP

MOSFET N-CH 650V 7A TO220FP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1260930-STF11N65M2 497-15034-5-ND STF11N65M2 STF11N65M2 STF11N65M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N65M2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
Polarity N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
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