STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N50M2 STF11N50M2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102939-STF11N50M2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 395pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 530 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102939-STF11N50M2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 395pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 530 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N50M2 - 1102939-STF11N50M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N50M2
1102939-STF11N50M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N50M2 1102939-STF11N50M2
Manufacturer: STMicroelectronics Win Source Part Number: 1102939-STF11N50M2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 395pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 530 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102939-STF11N50M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 395pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 530 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - STF11N50M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF11N50M2
Single FETs, MOSFETs STF11N50M2
MOSFET N-CH 500V 8A TO220FP

MOSFET N-CH 500V 8A TO220FP

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-15267-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15267-5-ND
Single FETs, MOSFETs 497-15267-5-ND
N-Channel 500V 8A (Tc) 25W (Tc) Through Hole TO-220FP

N-Channel 500V 8A (Tc) 25W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF11N50M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF11N50M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF11N50M2
MOSFET N-CH 500V 8A TO220FP

MOSFET N-CH 500V 8A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in TO-220FP package

MOSFET N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in TO-220FP package

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102939-STF11N50M2 STF11N50M2 497-15267-5-ND STF11N50M2 STF11N50M2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF11N50M2 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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