STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N95K5 STF10N95K5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212266-STF10N95K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF10N95K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 950V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 630pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): TSM8N70CI C0G; TK11A60D(LBS1TYU,Q; RDX100N60; TK11A60D(LBS1CN,Q); ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 212266-STF10N95K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF10N95K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 950V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 630pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): TSM8N70CI C0G; TK11A60D(LBS1TYU,Q; RDX100N60; TK11A60D(LBS1CN,Q); ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N95K5 - 212266-STF10N95K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N95K5
212266-STF10N95K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N95K5 212266-STF10N95K5
Manufacturer: STMicroelectronics Win Source Part Number: 212266-STF10N95K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Family Name: STF10N95K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 950V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 630pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V Alternative Parts (Cross-Reference): TSM8N70CI C0G; TK11A60D(LBS1TYU,Q; RDX100N60; TK11A60D(LBS1CN,Q); ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 212266-STF10N95K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Family Name: STF10N95K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 950V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 630pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V
Alternative Parts (Cross-Reference): TSM8N70CI C0G; TK11A60D(LBS1TYU,Q; RDX100N60; TK11A60D(LBS1CN,Q);
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-14552-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14552-5-ND
Single FETs, MOSFETs 497-14552-5-ND
N-Channel 950V 8A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 950V 8A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Single FETs, MOSFETs - STF10N95K5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF10N95K5
Single FETs, MOSFETs STF10N95K5
MOSFET N-CH 950V 8A TO220FP

MOSFET N-CH 950V 8A TO220FP

Supplier's Site Datasheet
Singapore
N-Channel 950 V 0.65 Ohm 8 A MOSFET Transistor
278-STF10N95K5
N-Channel 950 V 0.65 Ohm 8 A MOSFET Transistor 278-STF10N95K5
N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in TO-220FP package Product overview: STF10N95K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 950 V, 0.65 Ohm, 8 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 950 V, 0.65 Ohm, 8 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF10N95K5 can be used for catalog matching and distributor lookup.

N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in TO-220FP package Product overview: STF10N95K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 950 V, 0.65 Ohm, 8 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 950 V, 0.65 Ohm, 8 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STF10N95K5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF10N95K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF10N95K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF10N95K5
MOSFET N-CH 950V 8A TO220FP

MOSFET N-CH 950V 8A TO220FP

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 950V 0.65Ohm typ 8A Zener-protect

MOSFET N-Ch 950V 0.65Ohm typ 8A Zener-protect

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212266-STF10N95K5 497-14552-5-ND STF10N95K5 278-STF10N95K5 STF10N95K5 STF10N95K5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N95K5 Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 950 V 0.65 Ohm 8 A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 950 volts 950 volts
PD 30000 milliwatts 30000 milliwatts 30000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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