STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N80K5 STF10N80K5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212265-STF10N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 635pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N80K5 - 212265-STF10N80K5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STF10N80K5 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-15113-5-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type Stmicroelectronics - 45AC7551 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF10N80K5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 212265-STF10N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 635pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N80K5 - 212265-STF10N80K5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N80K5
212265-STF10N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N80K5 212265-STF10N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 212265-STF10N80K5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 635pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 600 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 212265-STF10N80K5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 635pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 600 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STF10N80K5 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STF10N80K5
Single FETs, MOSFETs STF10N80K5
MOSFET N-CH 800V 9A TO220FP

MOSFET N-CH 800V 9A TO220FP

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-15113-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15113-5-ND
Single FETs, MOSFETs 497-15113-5-ND
N-Channel 800V 9A (Tc) 30W (Tc) Through Hole TO-220FP

N-Channel 800V 9A (Tc) 30W (Tc) Through Hole TO-220FP

Buy Now Datasheet
Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type Stmicroelectronics - 45AC7551 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type Stmicroelectronics
45AC7551
Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type Stmicroelectronics 45AC7551
MOSFET, N-CH, 800V, 9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 9A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STF10N80K5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STF10N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STF10N80K5
MOSFET N-CH 800V 9A TO220FP

MOSFET N-CH 800V 9A TO220FP

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STF10N80K5
MOSFET STF10N80K5
MOSFET N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package

MOSFET N-channel 800 V, 0.470 Ohm typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212265-STF10N80K5 STF10N80K5 497-15113-5-ND 45AC7551 STF10N80K5 STF10N80K5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N80K5 Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 800V, 9A, To-220Fp; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 30000 milliwatts 30000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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