The STF10N65K3 is an N-channel power MOSFET with a maximum drain-source voltage of 650 V and a continuous drain current rating of 10 A at a case temperature of 25 ¬8C. It features a typical on-resistance of 0.75 Oc, making it suitable for applications requiring efficient switching performance. The device is housed in a TO-220FP narrow leads package and is RoHS compliant. This MOSFET is designed with Zener protection and has been 100% avalanche tested, ensuring reliability in demanding conditions. It exhibits high dv/dt capability and minimized gate charge, contributing to its superior dynamic performance. The maximum total power dissipation is rated at 35 W, with a thermal resistance of 3.57 ¬8C/W from junction to case. The operating junction temperature range is from -55 ¬8C to 150 ¬8C, making it versatile for various applications. Engineers considering this MOSFET for their projects will find it suitable for high-voltage switching applications, particularly where low on-resistance and high performance are critical.
Manufacturer: STMicroelectronics
Win Source Part Number: 005186-STF10N65K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1180pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
MOSFET N-CH 650V 10A TO220FP
N-Channel 650V 10A (Tc) 35W (Tc) Through Hole TO-220FP
MOSFET N-CH 650V 10A TO220FP
MOSFET Transistor, N Channel, 10 A, 650 V, 1 ohm, 10 V, 3 V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 005186-STF10N65K3 | STF10N65K3 | 497-12562-5-ND | STF10N65K3 | STF10N65K3 | 94T3371 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STF10N65K3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 10 A, 650 V, 1 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 650 volts | 650 volts | ||||
| PD | 35000 milliwatts | 35000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
