STMicroelectronics, Inc. FETs - Single - STE53NC50 STE53NC50

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260924-STE53NC50 Packaging: Tube Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOTOP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: ISOTOP Power Dissipation (Maximum): 460W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 10 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 53A Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V
  • FETs - Single - STE53NC50 - 1260924-STE53NC50 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-2776-5-ND - DigiKey
    DigiKey
  • MOSFETs - 4857383 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1686097 - RS Components, Ltd.
    RS Components, Ltd.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STE53NC50 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics - 72K7232 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260924-STE53NC50 Packaging: Tube Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOTOP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: ISOTOP Power Dissipation (Maximum): 460W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 10 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 53A Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STE53NC50 - 1260924-STE53NC50 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STE53NC50
1260924-STE53NC50
FETs - Single - STE53NC50 1260924-STE53NC50
Manufacturer: STMicroelectronics Win Source Part Number: 1260924-STE53NC50 Packaging: Tube Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOTOP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: ISOTOP Power Dissipation (Maximum): 460W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 10 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 53A Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260924-STE53NC50
Packaging: Tube
Mounting Style: Chassis Mount
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: ISOTOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: ISOTOP
Power Dissipation (Maximum): 460W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 10
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 53A
Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V

Buy Now
Single FETs, MOSFETs - 497-2776-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2776-5-ND
Single FETs, MOSFETs 497-2776-5-ND
N-Channel 500V 53A (Tc) 460W (Tc) Chassis Mount ISOTOP®

N-Channel 500V 53A (Tc) 460W (Tc) Chassis Mount ISOTOP®

Buy Now Datasheet
MOSFETs - 4857383 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
4857383
MOSFETs 4857383
MOSFET N-Channel 500V 53A ISOTOP4

MOSFET N-Channel 500V 53A ISOTOP4

Supplier's Site
MOSFETs - 1686097 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1686097
MOSFETs 1686097
MOSFET N-Channel 500V 53A ISOTOP4

MOSFET N-Channel 500V 53A ISOTOP4

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STE53NC50
MOSFET STE53NC50
MOSFET N-Ch 500 Volt 53 Amp

MOSFET N-Ch 500 Volt 53 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STE53NC50 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STE53NC50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STE53NC50
MOSFET N-CH 500V 53A ISOTOP

MOSFET N-CH 500V 53A ISOTOP

Supplier's Site
Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics - 72K7232 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics
72K7232
Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics 72K7232
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1260924-STE53NC50 497-2776-5-ND 4857383 STE53NC50 STE53NC50 72K7232
Product Name FETs - Single - STE53NC50 Single FETs, MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 460000 milliwatts 460000 milliwatts
TJ 150 C (302 F)
Package Type SOT3 SOT-227-4, miniBLOC Isotop ISOTOP TO-3
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