STMicroelectronics, Inc. FETs - Single - STE53NC50 STE53NC50

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260924-STE53NC50 Packaging: Tube Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOTOP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: ISOTOP Power Dissipation (Maximum): 460W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 10 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 53A Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V
  • FETs - Single - STE53NC50 - 1260924-STE53NC50 - Win Source Electronics
    Win Source Electronics
  • MOSFETs - 4857383 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 1686097 - RS Components, Ltd.
    RS Components, Ltd.
  • Single FETs, MOSFETs - 497-2776-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STE53NC50 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics - 72K7232 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260924-STE53NC50 Packaging: Tube Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOTOP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: ISOTOP Power Dissipation (Maximum): 460W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 10 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 53A Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STE53NC50 - 1260924-STE53NC50 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STE53NC50
1260924-STE53NC50
FETs - Single - STE53NC50 1260924-STE53NC50
Manufacturer: STMicroelectronics Win Source Part Number: 1260924-STE53NC50 Packaging: Tube Mounting Style: Chassis Mount Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOTOP Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: 150°C Manufacturer Homepage: www.st.com Manufacturer Package: ISOTOP Power Dissipation (Maximum): 460W Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 10 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 53A Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260924-STE53NC50
Packaging: Tube
Mounting Style: Chassis Mount
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: ISOTOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: ISOTOP
Power Dissipation (Maximum): 460W
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 10
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 53A
Rds On (Maximum) at Id, Vgs: 80mOhm at 27A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 434nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 11200pF at 25V

Buy Now
MOSFETs - 4857383 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
4857383
MOSFETs 4857383
MOSFET N-Channel 500V 53A ISOTOP4

MOSFET N-Channel 500V 53A ISOTOP4

Supplier's Site
MOSFETs - 1686097 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1686097
MOSFETs 1686097
MOSFET N-Channel 500V 53A ISOTOP4

MOSFET N-Channel 500V 53A ISOTOP4

Supplier's Site
Single FETs, MOSFETs - 497-2776-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2776-5-ND
Single FETs, MOSFETs 497-2776-5-ND
N-Channel 500V 53A (Tc) 460W (Tc) Chassis Mount ISOTOP®

N-Channel 500V 53A (Tc) 460W (Tc) Chassis Mount ISOTOP®

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STE53NC50 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STE53NC50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STE53NC50
MOSFET N-CH 500V 53A ISOTOP

MOSFET N-CH 500V 53A ISOTOP

Supplier's Site
Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics - 72K7232 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics
72K7232
Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics 72K7232
MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes

MOSFET, N, SOT-227B; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:460W; RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STE53NC50
MOSFET STE53NC50
MOSFET N-Ch 500 Volt 53 Amp

MOSFET N-Ch 500 Volt 53 Amp

Buy Now Datasheet

Technical Specifications

  Win Source Electronics RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1260924-STE53NC50 4857383 497-2776-5-ND STE53NC50 72K7232 STE53NC50
Product Name FETs - Single - STE53NC50 MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N, Sot-227B; Transistor Polarity Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 500 volts
PD 460000 milliwatts 460000 milliwatts
TJ 150 C (302 F)
Package Type SOT3 Isotop SOT-227-4, miniBLOC ISOTOP TO-3
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