N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP package Product overview: STE145N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.012 Ohm, 143 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.012 Ohm, 143 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STE145N65M5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 143A ISOTOP
N-Channel 650V 143A (Tc) 679W (Tc) Chassis Mount ISOTOP®
Win Source Part Number: 1016400-STE145N65M5
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ V
Package: Tube
Standard Package: 10
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 679W (Tc)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15112-5
Base Product Number: STE145
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 143A ISOTOP
MOSFET, N-CH, 650V, 143A, ISOTOP; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:143A; Transistor Mounting:Module; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. of Pins:4Pins RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STE145N65M5 | STE145N65M5 | 497-15112-5-ND | 1016400-STE145N65M5 | STE145N65M5 | 45AC7546 |
| Product Name | N-Channel 650 V 0.012 Ohm 143 A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 143A, Isotop; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 143000 milliamps | 143000 milliamps |
