STMicroelectronics, Inc. Single FETs, MOSFETs STD9NM50N-1

Description
N-Channel 500V 5A (Tc) 70W (Tc) Through Hole I-PAK
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Description
N-Channel 500V 5A (Tc) 70W (Tc) Through Hole I-PAK
Request a Quote Datasheet

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Single FETs, MOSFETs - STD9NM50N-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STD9NM50N-1-ND
Single FETs, MOSFETs STD9NM50N-1-ND
N-Channel 500V 5A (Tc) 70W (Tc) Through Hole I-PAK

N-Channel 500V 5A (Tc) 70W (Tc) Through Hole I-PAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278018-STD9NM50N-1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278018-STD9NM50N-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278018-STD9NM50N-1
Win Source Part Number: 1278018-STD9NM50N-1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 70W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: I-PAK Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278018-STD9NM50N-1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD9NM50N-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD9NM50N-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD9NM50N-1
MOSFET N-CH 500V 5A IPAK

MOSFET N-CH 500V 5A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number STD9NM50N-1-ND 1278018-STD9NM50N-1 STD9NM50N-1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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