STMicroelectronics, Inc. Single FETs, MOSFETs STD9NM40N

MOSFET N-CH 400V 5.6A DPAK

N-channel 400 V, 0.73 Ohm typ., 5.6 A MDmesh(TM) II Power MOSFET in a DPAK package Product overview: STD9NM40N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 400 V, 0.73 Ohm, 5.6 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400 V, 0.73 Ohm, 5.6 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD9NM40N can be used for catalog matching and distributor lookup.

N-Channel 400V 5.6A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 400V 5.6A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 400V 5.6A (Tc) 60W (Tc) Surface Mount DPAK

Manufacturer: STMicroelectronics
Win Source Part Number: 031168-STD9NM40N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 365pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 790 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited