STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD8NM60N-1 STD8NM60N-1

Manufacturer: STMicroelectronics
Win Source Part Number: 1102926-STD8NM60N-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 560pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

7A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, TO-251, IPAK-3 Product overview: STD8NM60N-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 7A, 600V, 0.65ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 7A, 600V, 0.65ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD8NM60N-1 can be used for catalog matching and distributor lookup.

N-Channel 600V 7A (Tc) 70W (Tc) Through Hole I-PAK