800V 6A N-CH MOSFET DPAK 950mR Rds(on) Product overview: STD8N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD8N80K5 can be used for catalog matching and distributor lookup.
MOSFET N CH 800V 6A DPAK
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 800V 6A (Tc) 110W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260905-STD8N80K5
Series: SuperMESH5
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Family Name: STD8N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: DPAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 16.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 450pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 110W (Tc)
Rds On (Maximum) @ Id, Vgs: 950 mOhm @ 3A, 10V
Alternative Parts (Cross-Reference): TSM80N950CP ROG; IPD80R1K0CE; IPD80R1K0CEBTMA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 800V, 6A, 110W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N CH 800V 6A DPAK
MOSFET N-Ch 800V 0.76 Ohm 6A MDmesh K5
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD8N80K5 | STD8N80K5 | 497-13643-2-ND | 1260905-STD8N80K5 | 07AH6966 | STD8N80K5 | STD8N80K5 |
| Product Name | 800V 6A DPAK MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD8N80K5 | Mosfet, N-Ch, 800V, 6A, 110W, To-252; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| PD | 110000 milliwatts | 110000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 800 volts |
