STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD80N6F6 STD80N6F6

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102920-STD80N6F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 7480pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102920-STD80N6F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 7480pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD80N6F6 - 1102920-STD80N6F6 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD80N6F6
1102920-STD80N6F6
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD80N6F6 1102920-STD80N6F6
Manufacturer: STMicroelectronics Win Source Part Number: 1102920-STD80N6F6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 120W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 122nC @ 10V Max Input Capacitance: 7480pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102920-STD80N6F6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 122nC @ 10V
Max Input Capacitance: 7480pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-13942-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13942-2-ND
Single FETs, MOSFETs 497-13942-2-ND
N-Channel 60V 80A (Tc) 120W (Tc) Surface Mount DPAK

N-Channel 60V 80A (Tc) 120W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - STD80N6F6 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD80N6F6
Single FETs, MOSFETs STD80N6F6
MOSFET N-CH 60V 80A DPAK

MOSFET N-CH 60V 80A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD80N6F6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD80N6F6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD80N6F6
MOSFET N-CH 60V 80A DPAK

MOSFET N-CH 60V 80A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1102920-STD80N6F6 497-13942-2-ND STD80N6F6 STD80N6F6
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD80N6F6 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 60 volts 60 volts
PD 120000 milliwatts 120000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 7480 pF @ 25 V
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