800V N-CH MOSFET, 6.5A, 1.05R, IPAK Product overview: STD7NM80-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD7NM80-1 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 935293-STD7NM80-1
Series: MDmesh™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 800 V 6.5A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)
Package: Tube
Package: TO-251-3 Short Leads, IPak, TO-251AA
Mounting: Through Hole
Part Status: Obsolete
Family Name: STD7
Categories: Discrete Semiconductor Products
Case / Package: TO-251 (IPAK)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 75
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: STD7NM801, STD7NM80-1-ND, -497-12787-5, 497-12787-5
N-Channel 800V 6.5A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)
MOSFET N-CH 800V 6.5A IPAK
MOSFET, N CH, 800V, 6.5A, IPAK ; Transistor Polarity:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.5A; On Resistance Rds(on):0.95ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes
MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
MOSFET N-CH 800V 6.5A IPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STD7NM80-1 | 935293-STD7NM80-1 | 497-12787-5-ND | STD7NM80-1 | 57P0819 | STD7NM80-1 | STD7NM80-1 |
| Product Name | 800V 6.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7NM80-1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 800V, 6.5A, Ipak ; Transistor Polarity Stmicroelectronics | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 90000 milliwatts | 90000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; TO-251 (IPAK) | TO-251-3 Short Leads, IPAK, TO-251AA | Through Hole | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | ||
| Packing Method | Tube; Tube |
