STMicroelectronics, Inc. Single FETs, MOSFETs STD7N60M2

Description
N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK
Request a Quote Datasheet
Description
N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13941-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13941-2-ND
Single FETs, MOSFETs 497-13941-2-ND
N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13941-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13941-6-ND
Single FETs, MOSFETs 497-13941-6-ND
N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13941-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13941-1-ND
Single FETs, MOSFETs 497-13941-1-ND
N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N60M2 - 1032314-STD7N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N60M2
1032314-STD7N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N60M2 1032314-STD7N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1032314-STD7N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8.8nC @ 10V Max Input Capacitance: 271pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 950 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1032314-STD7N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.8nC @ 10V
Max Input Capacitance: 271pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 950 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STD7N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD7N60M2
Single FETs, MOSFETs STD7N60M2
MOSFET N-CH 600V 5A DPAK

MOSFET N-CH 600V 5A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD7N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD7N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD7N60M2
MOSFET N-CH 600V 5A DPAK

MOSFET N-CH 600V 5A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2

MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2

Buy Now Datasheet
Mosfet, N-Ch, 600V, 5A, To-252-3; Transistor Polarity Stmicroelectronics - 98Y2471 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 5A, To-252-3; Transistor Polarity Stmicroelectronics
98Y2471
Mosfet, N-Ch, 600V, 5A, To-252-3; Transistor Polarity Stmicroelectronics 98Y2471
MOSFET, N-CH, 600V, 5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13941-2-ND 1032314-STD7N60M2 STD7N60M2 STD7N60M2 STD7N60M2 98Y2471
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N60M2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 5A, To-252-3; Transistor Polarity Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
V(BR)DSS 600 volts 600 volts
PD 60000 milliwatts 60000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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