STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 STD7N52K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102916-STD7N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 737pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 980 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): IPD50R650CE; R5207ANDTL; STD6N52K3; STD7N52K3; Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102916-STD7N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 737pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 980 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): IPD50R650CE; R5207ANDTL; STD6N52K3; STD7N52K3; Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 - 1102916-STD7N52K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3
1102916-STD7N52K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 1102916-STD7N52K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102916-STD7N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 737pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 980 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): IPD50R650CE; R5207ANDTL; STD6N52K3; STD7N52K3; Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102916-STD7N52K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 525V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 737pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 980 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): IPD50R650CE; R5207ANDTL; STD6N52K3; STD7N52K3;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
525V 6A DPAK MOSFET Transistor
278-STD7N52K3
525V 6A DPAK MOSFET Transistor 278-STD7N52K3
525V 6A N-CH MOSFET DPAK 850mR RdsOn Product overview: STD7N52K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 525V, 6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 525V, 6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD7N52K3 can be used for catalog matching and distributor lookup.

525V 6A N-CH MOSFET DPAK 850mR RdsOn Product overview: STD7N52K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 525V, 6A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 525V, 6A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD7N52K3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - STD7N52K3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD7N52K3
Single FETs, MOSFETs STD7N52K3
MOSFET N-CH 525V 6A DPAK

MOSFET N-CH 525V 6A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10016-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10016-2-ND
Single FETs, MOSFETs 497-10016-2-ND
N-Channel 525V 6A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 525V 6A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD7N52K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD7N52K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD7N52K3
MOSFET N-CH 525V 6A DPAK

MOSFET N-CH 525V 6A DPAK

Supplier's Site
Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics - 25R9374 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics
25R9374
Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics 25R9374
MOSFET, N CH, 525V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:525V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

MOSFET, N CH, 525V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:525V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 525 V 6.3 A DPAK

MOSFET N-channel 525 V 6.3 A DPAK

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102916-STD7N52K3 278-STD7N52K3 STD7N52K3 497-10016-2-ND STD7N52K3 25R9374 STD7N52K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 525V 6A DPAK MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 525 volts 525 volts
PD 90000 milliwatts 90000 milliwatts 90000 milliwatts
TJ 150 C (302 F) -55 C (-67 F) 150 C (302 F)
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