STMicroelectronics, Inc. Single FETs, MOSFETs STD7N52K3

Description
MOSFET N-CH 525V 6A DPAK
  • Single FETs, MOSFETs - STD7N52K3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 497-10016-2-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 - 1102916-STD7N52K3 - Win Source Electronics
    Win Source Electronics
  • Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics - 25R9374 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD7N52K3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 525V 6A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD7N52K3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD7N52K3
Single FETs, MOSFETs STD7N52K3
MOSFET N-CH 525V 6A DPAK

MOSFET N-CH 525V 6A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-10016-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10016-2-ND
Single FETs, MOSFETs 497-10016-2-ND
N-Channel 525V 6A (Tc) 90W (Tc) Surface Mount DPAK

N-Channel 525V 6A (Tc) 90W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 - 1102916-STD7N52K3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3
1102916-STD7N52K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 1102916-STD7N52K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102916-STD7N52K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 525V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 737pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 980 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference): IPD50R650CE; R5207ANDTL; STD6N52K3; STD7N52K3; Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102916-STD7N52K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 525V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 737pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 980 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): IPD50R650CE; R5207ANDTL; STD6N52K3; STD7N52K3;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD7N52K3
MOSFET STD7N52K3
MOSFET N-channel 525 V 6.3 A DPAK

MOSFET N-channel 525 V 6.3 A DPAK

Buy Now Datasheet
Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics - 25R9374 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics
25R9374
Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics 25R9374
MOSFET, N CH, 525V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:525V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

MOSFET, N CH, 525V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:525V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD7N52K3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD7N52K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD7N52K3
MOSFET N-CH 525V 6A DPAK

MOSFET N-CH 525V 6A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD7N52K3 497-10016-2-ND 1102916-STD7N52K3 STD7N52K3 25R9374 STD7N52K3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 MOSFET Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 525 volts 525 volts
IDSS 6000 milliamps 6000 milliamps
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