MOSFET N-CH 525V 6A DPAK
N-Channel 525V 6A (Tc) 90W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102916-STD7N52K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 525V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 737pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 980 mOhm @ 3.1A, 10V
Alternative Parts (Cross-Reference): IPD50R650CE; R5207ANDTL; STD6N52K3; STD7N52K3;
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET N-CH 525V 6A DPAK
MOSFET N-channel 525 V 6.3 A DPAK
MOSFET, N CH, 525V, 6A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:525V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STD7N52K3 | 497-10016-2-ND | 1102916-STD7N52K3 | STD7N52K3 | STD7N52K3 | 25R9374 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD7N52K3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 525V, 6A, To-252; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 525 volts | 525 volts | ||||
| IDSS | 6000 milliamps | 6000 milliamps |
