MOSFET N-CH 600V 5A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260895-STD7ANM60N
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 45W
Alternative Parts (Cross-Reference): TK8P60W; STD9NM60T4; STD9NM60;
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 5A
Rds On (Maximum) at Id, Vgs: 900mOhm at 2.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Gate Source Voltage (Maximum): ±25V
Input Capacitance (Ciss) (Maximum) at Vds: 363pF at 50V
N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount DPAK
N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount DPAK
N-Channel 600V 5A (Tc) 45W (Tc) Surface Mount DPAK
MOSFET N-CH 600V 5A DPAK
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MOSFET, AEC-Q101, N-CH, 600V, 5A, 45W ROHS COMPLIANT: YES
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STD7ANM60N | 1260895-STD7ANM60N | 497-13940-1-ND | STD7ANM60N | STD7ANM60N | 26AH0153 |
| Product Name | Single FETs, MOSFETs | Electronic Wholesale - STD7ANM60N | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 600V, 5A, 45W Rohs Compliant Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | 600 volts | ||||
| IDSS | 5000 milliamps | |||||
| PD | 45000 milliwatts | 45000 milliwatts |
