STMicroelectronics, Inc. Single FETs, MOSFETs STD70N6F3

Description
MOSFET N-CH 60V 70A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 60V 70A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD70N6F3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD70N6F3
Single FETs, MOSFETs STD70N6F3
MOSFET N-CH 60V 70A DPAK

MOSFET N-CH 60V 70A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-12240-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12240-1-ND
Single FETs, MOSFETs 497-12240-1-ND
N-Channel 60V 70A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 60V 70A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-12240-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12240-2-ND
Single FETs, MOSFETs 497-12240-2-ND
N-Channel 60V 70A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 60V 70A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N6F3 - 1102913-STD70N6F3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N6F3
1102913-STD70N6F3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N6F3 1102913-STD70N6F3
Manufacturer: STMicroelectronics Win Source Part Number: 1102913-STD70N6F3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 70A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10.5 mOhm @ 35A, 10V Alternative Parts (Cross-Reference): IPD50N06S4L-12; STD80N6F7; STD65N55LF3; Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102913-STD70N6F3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 70A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.5 mOhm @ 35A, 10V
Alternative Parts (Cross-Reference): IPD50N06S4L-12; STD80N6F7; STD65N55LF3;
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD70N6F3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD70N6F3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD70N6F3
MOSFET N-CH 60V 70A DPAK

MOSFET N-CH 60V 70A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 60V 8.0 mOhm 70A STripFET III

MOSFET N-Ch 60V 8.0 mOhm 70A STripFET III

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STD70N6F3 497-12240-1-ND 1102913-STD70N6F3 STD70N6F3 STD70N6F3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD70N6F3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts
IDSS 70000 milliamps
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