STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NM60N STD6NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 100660-STD6NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 420pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 920 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 100660-STD6NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 420pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 920 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NM60N - 100660-STD6NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NM60N
100660-STD6NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NM60N 100660-STD6NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 100660-STD6NM60N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 420pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 920 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 100660-STD6NM60N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 420pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 920 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - STD6NM60N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STD6NM60N-ND
Single FETs, MOSFETs STD6NM60N-ND
N-Channel 600V 4.6A (Tc) 45W (Tc) Surface Mount DPAK

N-Channel 600V 4.6A (Tc) 45W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD6NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD6NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD6NM60N
MOSFET N-CH 600V 4.6A DPAK

MOSFET N-CH 600V 4.6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 100660-STD6NM60N STD6NM60N-ND STD6NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NM60N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 45000 milliwatts
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