STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NF10T4 STD6NF10T4

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031157-STD6NF10T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient Application Field: Used in Safety, Consumer Electronics, Wireless, Computers & Computer Peripherals
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NF10T4 - 031157-STD6NF10T4 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-7974-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-7974-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-7974-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STD6NF10T4 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Mosfet, N Channel, 100V, 6A, Dpak; Channel Type Stmicroelectronics - 33R1170 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD6NF10T4 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 031157-STD6NF10T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient Application Field: Used in Safety, Consumer Electronics, Wireless, Computers & Computer Peripherals
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NF10T4 - 031157-STD6NF10T4 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NF10T4
031157-STD6NF10T4
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NF10T4 031157-STD6NF10T4
Manufacturer: STMicroelectronics Win Source Part Number: 031157-STD6NF10T4 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 30W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 250 mOhm @ 3A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient Application Field: Used in Safety, Consumer Electronics, Wireless, Computers & Computer Peripherals

Manufacturer: STMicroelectronics
Win Source Part Number: 031157-STD6NF10T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -65°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 3A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Safety, Consumer Electronics, Wireless, Computers & Computer Peripherals

Buy Now Datasheet
Single FETs, MOSFETs - 497-7974-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7974-1-ND
Single FETs, MOSFETs 497-7974-1-ND
N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK

N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-7974-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7974-6-ND
Single FETs, MOSFETs 497-7974-6-ND
N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK

N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-7974-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7974-2-ND
Single FETs, MOSFETs 497-7974-2-ND
N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK

N-Channel 100V 6A (Tc) 30W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - STD6NF10T4 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD6NF10T4
Single FETs, MOSFETs STD6NF10T4
MOSFET N-CH 100V 6A DPAK

MOSFET N-CH 100V 6A DPAK

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD6NF10T4
MOSFET STD6NF10T4
MOSFET N-Ch 100 Volt 6 Amp

MOSFET N-Ch 100 Volt 6 Amp

Buy Now Datasheet
Mosfet, N Channel, 100V, 6A, Dpak; Channel Type Stmicroelectronics - 33R1170 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 6A, Dpak; Channel Type Stmicroelectronics
33R1170
Mosfet, N Channel, 100V, 6A, Dpak; Channel Type Stmicroelectronics 33R1170
MOSFET, N CHANNEL, 100V, 6A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 6A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD6NF10T4 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD6NF10T4
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD6NF10T4
MOSFET N-CH 100V 6A DPAK

MOSFET N-CH 100V 6A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 031157-STD6NF10T4 497-7974-1-ND STD6NF10T4 STD6NF10T4 33R1170 STD6NF10T4
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6NF10T4 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N Channel, 100V, 6A, Dpak; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 30000 milliwatts 30000 milliwatts
TJ -65 to 175 C (-85 to 347 F) -65 to 175 C (-85 to 347 F)
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