STMicroelectronics, Inc. FETs - Single - STD6N80K5 STD6N80K5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260890-STD6N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 4.5A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V Gate Source Voltage (Maximum): 30V Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V
  • FETs - Single - STD6N80K5 - 1260890-STD6N80K5 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-14983-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14983-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-14983-1-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 800V, 4.5A, To-252; Channel Type Stmicroelectronics - 45AC7542 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD6N80K5 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1260890-STD6N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 4.5A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V Gate Source Voltage (Maximum): 30V Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - STD6N80K5 - 1260890-STD6N80K5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - STD6N80K5
1260890-STD6N80K5
FETs - Single - STD6N80K5 1260890-STD6N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 1260890-STD6N80K5 Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.st.com Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Power Dissipation (Maximum): 85W Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 4.5A Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V Gate Source Voltage (Maximum): 30V Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V

Manufacturer: STMicroelectronics
Win Source Part Number: 1260890-STD6N80K5
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 85W
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 4.5A
Rds On (Maximum) at Id, Vgs: 1.6Ohm at 2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 7.5nC at 10V
Gate Source Voltage (Maximum): 30V
Input Capacitance (Ciss) (Maximum) at Vds: 255pF at 100V

Buy Now
Single FETs, MOSFETs - 497-14983-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14983-6-ND
Single FETs, MOSFETs 497-14983-6-ND
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK

N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-14983-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14983-2-ND
Single FETs, MOSFETs 497-14983-2-ND
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK

N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-14983-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14983-1-ND
Single FETs, MOSFETs 497-14983-1-ND
N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK

N-Channel 800V 4.5A (Tc) 85W (Tc) Surface Mount DPAK

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD6N80K5
MOSFET STD6N80K5
MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in DPAK package

MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in DPAK package

Buy Now Datasheet
Mosfet, N-Ch, 800V, 4.5A, To-252; Channel Type Stmicroelectronics - 45AC7542 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 4.5A, To-252; Channel Type Stmicroelectronics
45AC7542
Mosfet, N-Ch, 800V, 4.5A, To-252; Channel Type Stmicroelectronics 45AC7542
MOSFET, N-CH, 800V, 4.5A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 800V, 4.5A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:4.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD6N80K5 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD6N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD6N80K5
MOSFET N-CH 800V 4.5A DPAK

MOSFET N-CH 800V 4.5A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1260890-STD6N80K5 497-14983-6-ND STD6N80K5 45AC7542 STD6N80K5
Product Name FETs - Single - STD6N80K5 Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 800V, 4.5A, To-252; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts
PD 85000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data