STMicroelectronics, Inc. Single FETs, MOSFETs STD6N60M2

Description
MOSFET N-CH 600V 4.5A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 600V 4.5A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD6N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD6N60M2
Single FETs, MOSFETs STD6N60M2
MOSFET N-CH 600V 4.5A DPAK

MOSFET N-CH 600V 4.5A DPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6N60M2 - 1102911-STD6N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6N60M2
1102911-STD6N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6N60M2 1102911-STD6N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 1102911-STD6N60M2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 8nC @ 10V Max Input Capacitance: 232pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 1.2 Ohm @ 2.25A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1102911-STD6N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 232pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 2.25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-13939-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13939-6-ND
Single FETs, MOSFETs 497-13939-6-ND
N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13939-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13939-1-ND
Single FETs, MOSFETs 497-13939-1-ND
N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-13939-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13939-2-ND
Single FETs, MOSFETs 497-13939-2-ND
N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 600V 4.5A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD6N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD6N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD6N60M2
MOSFET N-CH 600V 4.5A DPAK

MOSFET N-CH 600V 4.5A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2

MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2

Buy Now Datasheet
Mosfet, N-Ch, 600V, 4.5A, To-252; Transistor Polarity Stmicroelectronics - 61AC2090 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 4.5A, To-252; Transistor Polarity Stmicroelectronics
61AC2090
Mosfet, N-Ch, 600V, 4.5A, To-252; Transistor Polarity Stmicroelectronics 61AC2090
MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 600V, 4.5A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STD6N60M2 1102911-STD6N60M2 497-13939-6-ND STD6N60M2 STD6N60M2 61AC2090
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD6N60M2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 4.5A, To-252; Transistor Polarity Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 4500 milliamps 4500 milliamps
PD 60000 milliwatts 60000 milliwatts
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