STMicroelectronics, Inc. Single FETs, MOSFETs STD6N60DM2

Description
MOSFET N-CH 600V 5A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 600V 5A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD6N60DM2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD6N60DM2
Single FETs, MOSFETs STD6N60DM2
MOSFET N-CH 600V 5A DPAK

MOSFET N-CH 600V 5A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - STD6N60DM2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
STD6N60DM2-ND
Single FETs, MOSFETs STD6N60DM2-ND
N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount D-PAK (TO-252)

N-Channel 600V 5A (Tc) 60W (Tc) Surface Mount D-PAK (TO-252)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278117-STD6N60DM2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278117-STD6N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278117-STD6N60DM2
Win Source Part Number: 1278117-STD6N60DM2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ DM2 Package: Tape & Reel (TR) Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 60W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252) Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 51 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STD6N60 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278117-STD6N60DM2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ DM2
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 60W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252)
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 274 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STD6N60
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD6N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD6N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD6N60DM2
MOSFET N-CH 600V 5A DPAK

MOSFET N-CH 600V 5A DPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package

MOSFET N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STD6N60DM2 STD6N60DM2-ND 1278117-STD6N60DM2 STD6N60DM2 STD6N60DM2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 5000 milliamps
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