60V 60A N-Ch MOSFET, 16mR Rds(on), DPAK, STripFET II Product overview: STD60NF06T4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 60A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD60NF06T4 can be used for catalog matching and distributor lookup.
N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount DPAK
N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount DPAK
MOSFET N-Channel 60V 60A UltraFETII DPAK
MOSFET N-Channel 60V 60A UltraFETII DPAK
MOSFET N-Channel 60V 60A UltraFETII DPAK
N-channel 60 V, 0.014 Ohm typ.,
Manufacturer: STMicroelectronics
Win Source Part Number: 006353-STD60NF06T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 66nC @ 10V
Max Input Capacitance: 1810pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500
POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 60V, 0.016OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:110W RoHS Compliant: Yes
N-channel 60 V, 0.014 Ohm typ.
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Win Source Electronics | Radwell International | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STD60NF06T4 | 497-6195-1-ND | 6875071 | 6875071P | STD60NF06T4 | 006353-STD60NF06T4 | 38972749 | STD60NF06T4 | 26M3529 | STD60NF06T4 |
| Product Name | 60V 60A DPAK MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60NF06T4 | Transistor | MOSFET | Mosfet, N, D-Pak; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||||
| PD | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | 110000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK); D-Pak | TO-3 | DPAK | |||
| MOSFET Operating Mode | Enhancement |
