STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N55F3 STD60N55F3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 006352-STD60N55F3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 32A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 006352-STD60N55F3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 32A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N55F3 - 006352-STD60N55F3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N55F3
006352-STD60N55F3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N55F3 006352-STD60N55F3
Manufacturer: STMicroelectronics Win Source Part Number: 006352-STD60N55F3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.5 mOhm @ 32A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 006352-STD60N55F3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 32A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-7972-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7972-2-ND
Single FETs, MOSFETs 497-7972-2-ND
N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount DPAK

N-Channel 55V 80A (Tc) 110W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - STD60N55F3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD60N55F3
Single FETs, MOSFETs STD60N55F3
MOSFET N-CH 55V 80A DPAK

MOSFET N-CH 55V 80A DPAK

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N Ch 55V 6.5mohm 80A

MOSFET N Ch 55V 6.5mohm 80A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD60N55F3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD60N55F3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD60N55F3
MOSFET N-CH 55V 80A DPAK

MOSFET N-CH 55V 80A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 006352-STD60N55F3 497-7972-2-ND STD60N55F3 STD60N55F3 STD60N55F3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N55F3 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 55 volts 55 volts
PD 110000 milliwatts 110000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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