STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N3LH5 STD60N3LH5

Description
Manufacturer: STMicroelectronics Win Source Part Number: 031154-STD60N3LH5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.8nC @ 5V Max Input Capacitance: 1350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 24A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 031154-STD60N3LH5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.8nC @ 5V Max Input Capacitance: 1350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 24A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N3LH5 - 031154-STD60N3LH5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N3LH5
031154-STD60N3LH5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N3LH5 031154-STD60N3LH5
Manufacturer: STMicroelectronics Win Source Part Number: 031154-STD60N3LH5 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.8nC @ 5V Max Input Capacitance: 1350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 24A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 031154-STD60N3LH5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 8.8nC @ 5V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 24A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Transistor - 38972745 - Radwell International
Willingboro, NJ, United States
Transistor
38972745
Transistor 38972745
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 48A I(D), 30V, 0.0114OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 48A I(D), 30V, 0.0114OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - 497-7971-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-7971-2-ND
Single FETs, MOSFETs 497-7971-2-ND
N-Channel 30V 48A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 30V 48A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD60N3LH5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD60N3LH5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD60N3LH5
MOSFET N-CH 30V 48A DPAK

MOSFET N-CH 30V 48A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors RF Transistors
Product Number 031154-STD60N3LH5 38972745 497-7971-2-ND STD60N3LH5
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD60N3LH5 Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 60000 milliwatts
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