(PRICE/TC) MOSFET, N, D-PAK; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:650V; CONTINUOUS DRAIN CURRENT ID:5A; ON RESISTANCE RDS(ON):1OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:4V ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 600V 5A DPAK
N-Channel 600V 5A (Tc) 96W (Tc) Surface Mount DPAK
N-Channel 600V 5A (Tc) 96W (Tc) Surface Mount DPAK
N-Channel 600V 5A (Tc) 96W (Tc) Surface Mount DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 031153-STD5NM60T4
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96W (Tc)
Family Name: STD5NM60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): CDM7-650 BK; IPD60R1K4C6BTMA1; AOD4C60;
Introduction Date: April 14, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 600V 5A DPAK
MOSFET, N, D-PAK; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:96W RoHS Compliant: Yes
| Radwell International | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 38972741 | STD5NM60T4 | 497-3163-1-ND | 1888455 | 1888455P | 031153-STD5NM60T4 | STD5NM60T4 | 26M3528 | STD5NM60T4 |
| Product Name | Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NM60T4 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, D-Pak; Channel Type Stmicroelectronics | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 600 volts | 650 volts | 600 volts | ||||||
| IDSS | 5000 milliamps | 5000 milliamps | 5000 milliamps | 5000 milliamps | |||||
| PD | 96000 milliwatts | 96000 milliwatts | 96000 milliwatts |
