STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NM60-1 STD5NM60-1

Manufacturer: STMicroelectronics
Win Source Part Number: 066324-STD5NM60-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 96W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 18nC @ 10V
Max Input Capacitance: 400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1 Ohm @ 2.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

600V N-CH MOSFET, 1R Rds On, 5A ID, TO-251 Product overview: STD5NM60-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD5NM60-1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 5A IPAK

N-Channel 600V 5A (Tc) 96W (Tc) Through Hole I-PAK