N-Channel 400V 3A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)
Manufacturer: STMicroelectronics
Win Source Part Number: 066321-STD5NK40Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STD5NK40Z-1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 17nC @ 10V
Max Input Capacitance: 305pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): AOI5N40; MDIS5N40TH; MDI5N40TH; IRFU320;
Introduction Date: July 23, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient
400V 3A N-CH MOSFET, 1.8 Ohm Rds(on), TO-251 Product overview: STD5NK40Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 400V, 3A, 1.8 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 400V, 3A, 1.8 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD5NK40Z-1 can be used for catalog matching and distributor lookup.
MOSFET N-CH 400V 3A IPAK
MOSFET, N, I-PAK; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:45W RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-16199-5-ND | 066321-STD5NK40Z-1 | 278-STD5NK40Z-1 | STD5NK40Z-1 | STD5NK40Z-1 | 26M3523 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5NK40Z-1 | 400V 3A 1.8 Ohm MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N, I-Pak; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; I-Pak | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | |
| V(BR)DSS | 400 volts | 400 volts | ||||
| PD | 45000 milliwatts | 45000 milliwatts | 45000 milliwatts | 45000 milliwatts |
