STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N62K3 STD5N62K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102901-STD5N62K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 4.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 680pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.1A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N62K3 - 1102901-STD5N62K3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-10778-6-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10778-2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 497-10778-1-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STD5N62K3 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD5N62K3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Ch, 620V, 4.2A, To-252; Channel Type Stmicroelectronics - 21T3982 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 1102901-STD5N62K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 4.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 680pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.1A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N62K3 - 1102901-STD5N62K3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N62K3
1102901-STD5N62K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N62K3 1102901-STD5N62K3
Manufacturer: STMicroelectronics Win Source Part Number: 1102901-STD5N62K3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 620V Continuous Drain Current at 25°C: 4.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 680pF @ 50V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.1A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Sufficient

Manufacturer: STMicroelectronics
Win Source Part Number: 1102901-STD5N62K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 4.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 680pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 497-10778-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10778-6-ND
Single FETs, MOSFETs 497-10778-6-ND
N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10778-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10778-2-ND
Single FETs, MOSFETs 497-10778-2-ND
N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-10778-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10778-1-ND
Single FETs, MOSFETs 497-10778-1-ND
N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK

N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - STD5N62K3 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD5N62K3
Single FETs, MOSFETs STD5N62K3
MOSFET N-CH 620V 4.2A DPAK

MOSFET N-CH 620V 4.2A DPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD5N62K3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD5N62K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD5N62K3
MOSFET N-CH 620V 4.2A DPAK

MOSFET N-CH 620V 4.2A DPAK

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STD5N62K3
MOSFET STD5N62K3
MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A

MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A

Buy Now Datasheet
Mosfet, N Ch, 620V, 4.2A, To-252; Channel Type Stmicroelectronics - 21T3982 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 620V, 4.2A, To-252; Channel Type Stmicroelectronics
21T3982
Mosfet, N Ch, 620V, 4.2A, To-252; Channel Type Stmicroelectronics 21T3982
MOSFET, N CH, 620V, 4.2A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

MOSFET, N CH, 620V, 4.2A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1102901-STD5N62K3 497-10778-6-ND STD5N62K3 STD5N62K3 STD5N62K3 21T3982
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N62K3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Ch, 620V, 4.2A, To-252; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 620 volts 620 volts
PD 70000 milliwatts 70000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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