MOSFET N-CH 620V 4.2A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1102901-STD5N62K3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 620V
Continuous Drain Current at 25°C: 4.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 680pF @ 50V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Sufficient
N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK
N-Channel 620V 4.2A (Tc) 70W (Tc) Surface Mount DPAK
MOSFET, N CH, 620V, 4.2A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:4.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
MOSFET N-CH 620V 4.2A DPAK
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STD5N62K3 | 1102901-STD5N62K3 | 497-10778-6-ND | 21T3982 | STD5N62K3 | STD5N62K3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N62K3 | Single FETs, MOSFETs | Mosfet, N Ch, 620V, 4.2A, To-252; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 620 volts | 620 volts | ||||
| IDSS | 4200 milliamps | 4200 milliamps |
