Manufacturer: STMicroelectronics
Win Source Part Number: 1102900-STD5N60M2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 8.5nC @ 10V
Max Input Capacitance: 211pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 1.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK
N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK
N-Channel 600V 3.5A (Tc) 45W (Tc) Surface Mount DPAK
MOSFET N-CH 600V 3.5A DPAK
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package Product overview: STD5N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 1.3 Ohm, 3.5 A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 1.3 Ohm, 3.5 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD5N60M2 can be used for catalog matching and distributor lookup.
MOSFET N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
MOSFET N-CH 600V 3.5A DPAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1102900-STD5N60M2 | 497-14982-2-ND | STD5N60M2 | 278-STD5N60M2 | STD5N60M2 | STD5N60M2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD5N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 600 V 1.3 Ohm 3.5 A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 45000 milliwatts | 45000 milliwatts | 45000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) | -55 C (-67 F) |