STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4NK80Z-1 STD4NK80Z-1

Description
Manufacturer: STMicroelectronics Win Source Part Number: 066319-STD4NK80Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22.5nC @ 10V Max Input Capacitance: 575pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 066319-STD4NK80Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22.5nC @ 10V Max Input Capacitance: 575pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4NK80Z-1 - 066319-STD4NK80Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4NK80Z-1
066319-STD4NK80Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4NK80Z-1 066319-STD4NK80Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 066319-STD4NK80Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 80W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 22.5nC @ 10V Max Input Capacitance: 575pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.5 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 066319-STD4NK80Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 22.5nC @ 10V
Max Input Capacitance: 575pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
N-Channel 800 V 2.7 Ohm 3 A MOSFET Transistor
278-STD4NK80Z-1
N-Channel 800 V 2.7 Ohm 3 A MOSFET Transistor 278-STD4NK80Z-1
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package Product overview: STD4NK80Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 2.7 Ohm, 3 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 2.7 Ohm, 3 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD4NK80Z-1 can be used for catalog matching and distributor lookup.

N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package Product overview: STD4NK80Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 2.7 Ohm, 3 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 2.7 Ohm, 3 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD4NK80Z-1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-STD4NK80Z-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STD4NK80Z-1-ND
Single FETs, MOSFETs 497-STD4NK80Z-1-ND
N-Channel 800V 3A (Tc) 80W (Tc) Through Hole TO-251 (IPAK)

N-Channel 800V 3A (Tc) 80W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
MOSFET N-CH 800V 3A IPAK - 761-STD4NK80Z-1 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 3A IPAK
761-STD4NK80Z-1
MOSFET N-CH 800V 3A IPAK 761-STD4NK80Z-1
MOSFET N-CH 800V 3A IPAK

MOSFET N-CH 800V 3A IPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD4NK80Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD4NK80Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD4NK80Z-1
MOSFET N-CH 800V 3A IPAK

MOSFET N-CH 800V 3A IPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A

MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 066319-STD4NK80Z-1 278-STD4NK80Z-1 497-STD4NK80Z-1-ND 761-STD4NK80Z-1 STD4NK80Z-1 STD4NK80Z-1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4NK80Z-1 N-Channel 800 V 2.7 Ohm 3 A MOSFET Transistor Single FETs, MOSFETs MOSFET N-CH 800V 3A IPAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 80000 milliwatts 80000 milliwatts 80000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; I-Pak TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
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