N-Channel 800V 3A (Tc) 80W (Tc) Through Hole TO-251 (IPAK)
N-channel 800 V, 2.7 Ohm typ., 3 A SuperMESH Power MOSFET in an IPAK package Product overview: STD4NK80Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 800 V, 2.7 Ohm, 3 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800 V, 2.7 Ohm, 3 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD4NK80Z-1 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 066319-STD4NK80Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 22.5nC @ 10V
Max Input Capacitance: 575pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.5 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
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| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-STD4NK80Z-1-ND | 278-STD4NK80Z-1 | 066319-STD4NK80Z-1 | STD4NK80Z-1 | 761-STD4NK80Z-1 | STD4NK80Z-1 |
| Product Name | Single FETs, MOSFETs | N-Channel 800 V 2.7 Ohm 3 A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4NK80Z-1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 800V 3A IPAK | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | SOT3; I-Pak | TO-251-3 Short Leads, IPak, TO-251AA | |||
| PD | 80000 milliwatts | 80000 milliwatts | 80000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 800 volts | 800 volts |
