STMicroelectronics, Inc. Single FETs, MOSFETs STD4NK60Z-1

N-Channel 600V 4A (Tc) 70W (Tc) Through Hole I-PAK

600V 4A N-CH MOSFET, 2 Ohm, IPAK, Through Hole Product overview: STD4NK60Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 600V, 4A, 2 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 600V, 4A, 2 Ohm, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD4NK60Z-1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 4A IPAK

Manufacturer: STMicroelectronics
Win Source Part Number: 066318-STD4NK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STD4NK60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 510pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 2A, 10V
Alternative Parts (Cross-Reference): MDI4N60TH; MDI4N60BTH; MDIS4N60BTH; MDIS4N65BTH;
Introduction Date: June 20, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited