N-Channel 1000V 2.2A (Tc) 90W (Tc) Surface Mount DPAK
N-Channel 1000V 2.2A (Tc) 90W (Tc) Surface Mount DPAK
N-Channel 1000V 2.2A (Tc) 90W (Tc) Surface Mount DPAK
Automotive-grade N-channel 1000 V, 5.6 Ohm typ., 2.2 A SuperMESH Power MOSFET in a DPAK package Product overview: STD4NK100Z from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 1000 V, 5.6 Ohm, 2.2 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 1000 V, 5.6 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD4NK100Z can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1260861-STD4NK100Z
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Maximum): 90W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 2.2A
Rds On (Maximum) at Id, Vgs: 6.8Ohm at 1.1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs: 18nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 601pF at 25V
MOSFET N-Ch 1000V 2.2A SuperMESH DPAK
MOSFET N-Ch 1000V 2.2A SuperMESH DPAK
MOSFET N-Ch 1000V 2.2A SuperMESH DPAK
MOSFET N-CH 1000V 2.2A DPAK
MOSFET, AEC-Q101, N-CH, 1KV, 2.2A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):5.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.75V; Power RoHS Compliant: Yes
MOSFET N-CH 1000V 2.2A DPAK
MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperMESH Power MOSFET in a DPAK package
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 497-16035-6-ND | 278-STD4NK100Z | 1260861-STD4NK100Z | 9062776 | 9062776P | STD4NK100Z | 07AH6963 | STD4NK100Z | STD4NK100Z |
| Product Name | Single FETs, MOSFETs | Automotive N-Channel 1000 V 5.6 Ohm MOSFET Transistor | FETs - Single - STD4NK100Z | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 1Kv, 2.2A, To-252; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| Package Type | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | SOT3; TO-252 (DPAK) | TO-252 (DPAK); Dpak (to-252) | TO-252 (DPAK); TO-252 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3; TO-252 (DPAK) | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | ||
| Transistor Grade / Operating Range | Automotive | ||||||||
| PD | 90000 milliwatts | 90000 milliwatts | 90000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
