MOSFET N-CH 800V 3A DPAK
Manufacturer: STMicroelectronics
Win Source Part Number: 1260859-STD4N80K5
Series: SuperMESH5
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Family Name: STD4N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: DPAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 175pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 60W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): TSM3N80CP ROG; SPD02N80C3BTMA1; CDM3-800;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
800V N-Ch MOSFET, 3A, 2.1 Ohm Rds(on), DPAK Product overview: STD4N80K5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 3A, 2.1 Ohm, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 3A, 2.1 Ohm, DPAK, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD4N80K5 can be used for catalog matching and distributor lookup.
N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK
N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK
N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK
MOSFET, N-CH, 800V, 3A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 800V 2.1Ohm 3A Zener-protected
MOSFET N-CH 800V 3A DPAK
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STD4N80K5 | 1260859-STD4N80K5 | 278-STD4N80K5 | 497-14033-6-ND | 26AH0150 | STD4N80K5 | STD4N80K5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N80K5 | 800V 3A 2.1 Ohm DPAK MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 3A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 800 volts | ||||||
| IDSS | 3000 milliamps | 3000 milliamps | |||||
| PD | 60000 milliwatts | 60000 milliwatts |
