STMicroelectronics, Inc. Single FETs, MOSFETs STD4N80K5

Description
MOSFET N-CH 800V 3A DPAK
Request a Quote Datasheet
Description
MOSFET N-CH 800V 3A DPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD4N80K5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD4N80K5
Single FETs, MOSFETs STD4N80K5
MOSFET N-CH 800V 3A DPAK

MOSFET N-CH 800V 3A DPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-14033-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14033-6-ND
Single FETs, MOSFETs 497-14033-6-ND
N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-14033-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14033-2-ND
Single FETs, MOSFETs 497-14033-2-ND
N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 497-14033-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-14033-1-ND
Single FETs, MOSFETs 497-14033-1-ND
N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK

N-Channel 800V 3A (Tc) 60W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N80K5 - 1260859-STD4N80K5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N80K5
1260859-STD4N80K5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N80K5 1260859-STD4N80K5
Manufacturer: STMicroelectronics Win Source Part Number: 1260859-STD4N80K5 Series: SuperMESH5 Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Family Name: STD4N80K5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: DPAK Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 175pF @ 100V Vgs (Maximum): ±30V Power Dissipation (Maximum): 60W (Tc) Rds On (Maximum) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): TSM3N80CP ROG; SPD02N80C3BTMA1; CDM3-800; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1260859-STD4N80K5
Series: SuperMESH5
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Family Name: STD4N80K5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: DPAK
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 175pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 60W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): TSM3N80CP ROG; SPD02N80C3BTMA1; CDM3-800;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH 800V 2.1Ohm 3A Zener-protected

MOSFET N-CH 800V 2.1Ohm 3A Zener-protected

Buy Now Datasheet
Mosfet, N-Ch, 800V, 3A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics - 26AH0150 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 3A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics
26AH0150
Mosfet, N-Ch, 800V, 3A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics 26AH0150
MOSFET, N-CH, 800V, 3A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 800V, 3A, 150DEG C, 60W; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD4N80K5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD4N80K5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD4N80K5
MOSFET N-CH 800V 3A DPAK

MOSFET N-CH 800V 3A DPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD4N80K5 497-14033-6-ND 1260859-STD4N80K5 STD4N80K5 26AH0150 STD4N80K5
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD4N80K5 MOSFET Mosfet, N-Ch, 800V, 3A, 150Deg C, 60W; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts
IDSS 3000 milliamps 3000 milliamps
PD 60000 milliwatts
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