STMicroelectronics, Inc. N-Channel 3A 600V 1.5ohm MOSFET Transistor STD3NM60-1

3A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 Product overview: STD3NM60-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 3A, 600V, 1.5ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3A, 600V, 1.5ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD3NM60-1 can be used for catalog matching and distributor lookup.

N-Channel 600V 3A (Tc) 42W (Tc) Through Hole I-PAK

Manufacturer: STMicroelectronics
Win Source Part Number: 066315-STD3NM60-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 324pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited