STMicroelectronics, Inc. Single FETs, MOSFETs STD3NK80Z-1

Description
N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet
Description
N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12557-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12557-5-ND
Single FETs, MOSFETs 497-12557-5-ND
N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

N-Channel 800V 2.5A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

Buy Now Datasheet
Single FETs, MOSFETs - STD3NK80Z-1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD3NK80Z-1
Single FETs, MOSFETs STD3NK80Z-1
MOSFET N-CH 800V 2.5A IPAK

MOSFET N-CH 800V 2.5A IPAK

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK80Z-1 - 093144-STD3NK80Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK80Z-1
093144-STD3NK80Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK80Z-1 093144-STD3NK80Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 093144-STD3NK80Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 70W (Tc) Family Name: STD3NK80 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 2.5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 19nC @ 10V Max Input Capacitance: 485pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1.25A, 10V Alternative Parts (Cross-Reference): NDD03N80Z-1G; IXTU2N80P; TSM3N80CH C5G; IPU80R4K5P7; Introduction Date: September 01, 2003 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 093144-STD3NK80Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 70W (Tc)
Family Name: STD3NK80
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2.5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 485pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 1.25A, 10V
Alternative Parts (Cross-Reference): NDD03N80Z-1G; IXTU2N80P; TSM3N80CH C5G; IPU80R4K5P7;
Introduction Date: September 01, 2003
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Corby, Northants, United Kingdom
MOSFETs
6875352
MOSFETs 6875352
MOSFET N-Ch 800V 2.5A SuperMESH IPAK

MOSFET N-Ch 800V 2.5A SuperMESH IPAK

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
1686701
MOSFETs 1686701
MOSFET N-Ch 800V 2.5A SuperMESH IPAK

MOSFET N-Ch 800V 2.5A SuperMESH IPAK

Supplier's Site
Corby, Northants, United Kingdom
MOSFETs
6875352P
MOSFETs 6875352P
MOSFET N-Ch 800V 2.5A SuperMESH IPAK

MOSFET N-Ch 800V 2.5A SuperMESH IPAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD3NK80Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD3NK80Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD3NK80Z-1
MOSFET N-CH 800V 2.5A IPAK

MOSFET N-CH 800V 2.5A IPAK

Supplier's Site
Mosfet, N Channel, 800V, 2.5A, To-251; Channel Type Stmicroelectronics - 33R1154 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 800V, 2.5A, To-251; Channel Type Stmicroelectronics
33R1154
Mosfet, N Channel, 800V, 2.5A, To-251; Channel Type Stmicroelectronics 33R1154
MOSFET, N CHANNEL, 800V, 2.5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

MOSFET, N CHANNEL, 800V, 2.5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A

MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics RS Components, Ltd. RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-12557-5-ND STD3NK80Z-1 093144-STD3NK80Z-1 6875352 6875352P STD3NK80Z-1 33R1154 STD3NK80Z-1
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK80Z-1 MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 800V, 2.5A, To-251; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA SOT3; I-Pak IPAK (TO-251) IPAK (TO-251) TO-251 (IPAK) TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 800 volts 800 volts 800 volts 800 volts
IDSS 2500 milliamps 2500 milliamps 2500 milliamps 2500 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

Hard To Find - 06N80C3 - 1120748-06N80C3 - Win Source Electronics
Infineon Technologies AG
Specs
Package Type SOT3
View Details
GaAs Fet Switches - KCB821 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor - QPD1026L - Qorvo
Specs
Transistor Technology / Material 1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Eared)
View Details
2 suppliers