STMicroelectronics, Inc. Single FETs, MOSFETs STD3NK60ZD

Description
N-Channel 600V 2.4A (Tc) 45W (Tc) Surface Mount DPAK
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Description
N-Channel 600V 2.4A (Tc) 45W (Tc) Surface Mount DPAK
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 497-10093-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-10093-2-ND
Single FETs, MOSFETs 497-10093-2-ND
N-Channel 600V 2.4A (Tc) 45W (Tc) Surface Mount DPAK

N-Channel 600V 2.4A (Tc) 45W (Tc) Surface Mount DPAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK60ZD - 1102884-STD3NK60ZD - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK60ZD
1102884-STD3NK60ZD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK60ZD 1102884-STD3NK60ZD
Manufacturer: STMicroelectronics Win Source Part Number: 1102884-STD3NK60ZD Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: DPAK Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 11.8nC @ 10V Max Input Capacitance: 311pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 1102884-STD3NK60ZD
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 11.8nC @ 10V
Max Input Capacitance: 311pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD3NK60ZD - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD3NK60ZD
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD3NK60ZD
MOSFET N-CH 600V 2.4A DPAK

MOSFET N-CH 600V 2.4A DPAK

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-10093-2-ND 1102884-STD3NK60ZD STD3NK60ZD
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK60ZD Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); DPAK TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 600 volts
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