STMicroelectronics, Inc. Single FETs, MOSFETs STD3NK60Z-1

MOSFET N-CH 600V 2.4A IPAK

Manufacturer: STMicroelectronics
Win Source Part Number: 031140-STD3NK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STD3NK60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 11.8nC @ 10V
Max Input Capacitance: 311pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V
Alternative Parts (Cross-Reference): IPU60R2K1CEBKMA1; AOI4N60; AOU3N60;
Introduction Date: October 22, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

High-voltage MOSFET

High-voltage MOSFET

N-Channel 600V 2.4A (Tc) 45W (Tc) Through Hole I-PAK

600V 2.4A N-CH MOSFET, 3.6 Ohm Rds(on), IPAK Product overview: STD3NK60Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.4A, 3.6 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.4A, 3.6 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD3NK60Z-1 can be used for catalog matching and distributor lookup.