MOSFET N-CH 600V 2.4A IPAK
600V 2.4A N-CH MOSFET, 3.6 Ohm Rds(on), IPAK Product overview: STD3NK60Z-1 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.4A, 3.6 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.4A, 3.6 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STD3NK60Z-1 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 031140-STD3NK60Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STD3NK60
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 11.8nC @ 10V
Max Input Capacitance: 311pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.6 Ohm @ 1.2A, 10V
Alternative Parts (Cross-Reference): IPU60R2K1CEBKMA1; AOI4N60; AOU3N60;
Introduction Date: October 22, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient
N-Channel 600V 2.4A (Tc) 45W (Tc) Through Hole I-PAK
MOSFET, N, I-PAK; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:2.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:45W RoHS Compliant: Yes
HV MOSFET PLANAR
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MOSFET N-CH 600V 2.4A IPAK
| RS Components, Ltd. | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 151949 | STD3NK60Z-1 | 278-STD3NK60Z-1 | 031140-STD3NK60Z-1 | 497-19648-ND | 26M3516 | 57P0754 | STD3NK60Z-1 | STD3NK60Z-1 |
| Product Name | MOSFETs | Single FETs, MOSFETs | 600V 2.4A 3.6 Ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK60Z-1 | Single FETs, MOSFETs | Mosfet, N, I-Pak; Channel Type Stmicroelectronics | Hv Mosfet Planar Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | IPAK | TO-251-3 Short Leads, IPak, TO-251AA | SOT3; I-Pak | TO-251-3 Short Leads, IPAK, TO-251AA | TO-3 | TO-3 | TO-251-3 Short Leads, IPak, TO-251AA | ||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 600 volts | 600 volts |
