STMicroelectronics, Inc. Single FETs, MOSFETs STD3NK50Z-1

Description
MOSFET N-CH 500V 2.3A IPAK
Request a Quote Datasheet
Description
MOSFET N-CH 500V 2.3A IPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STD3NK50Z-1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STD3NK50Z-1
Single FETs, MOSFETs STD3NK50Z-1
MOSFET N-CH 500V 2.3A IPAK

MOSFET N-CH 500V 2.3A IPAK

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK50Z-1 - 094529-STD3NK50Z-1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK50Z-1
094529-STD3NK50Z-1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK50Z-1 094529-STD3NK50Z-1
Manufacturer: STMicroelectronics Win Source Part Number: 094529-STD3NK50Z-1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: STD3NK50 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 2.3A (Tc) Gate-Source Threshold Voltage: 4.5V @ 50μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.3 Ohm @ 1.15A, 10V Alternative Parts (Cross-Reference): AOU3N50; 2SK2616; NDD03N50Z-1G; Introduction Date: July 09, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 094529-STD3NK50Z-1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Family Name: STD3NK50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 2.3A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.3 Ohm @ 1.15A, 10V
Alternative Parts (Cross-Reference): AOU3N50; 2SK2616; NDD03N50Z-1G;
Introduction Date: July 09, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 497-19145-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-19145-ND
Single FETs, MOSFETs 497-19145-ND
N-Channel 500V 2.3A (Tc) 45W (Tc) Through Hole I-PAK

N-Channel 500V 2.3A (Tc) 45W (Tc) Through Hole I-PAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch, 500V-3ohms Zener SuperMESH 2.3A

MOSFET N-Ch, 500V-3ohms Zener SuperMESH 2.3A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STD3NK50Z-1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STD3NK50Z-1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STD3NK50Z-1
MOSFET N-CH 500V 2.3A IPAK

MOSFET N-CH 500V 2.3A IPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STD3NK50Z-1 094529-STD3NK50Z-1 497-19145-ND STD3NK50Z-1 STD3NK50Z-1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STD3NK50Z-1 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 500 volts 500 volts
IDSS 2300 milliamps
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